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| AOT424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOT424 is Pb-free (meets ROHS & Sony 259 specifications). AOT424L is a Green Product ordering option. AOT424 and AOT424L are electrically identical. TO-220 D Features VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 4m (VGS = 10V) RDS(ON) < 5.5m (VGS = 4.5V) G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Case C Maximum 30 20 110 88 200 30 112 100 50 -55 to 175 Units V V A A mJ W C TC=25C G TC=100C B ID IDM IAR EAR PD TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJC Typ 14.2 39 0.8 Max 20 50 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOT424 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=30A Forward Transconductance VDS=5V, ID=30A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 110 3 4.7 4.3 106 0.72 1 85 3200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 590 414 0.54 59.6 VGS=10V, VDS=15V, ID=30A 30.4 9.5 19.8 12.5 VGS=10V, VDS=15V, RL=0.5, RGEN=3 IF=30A, dI/dt=100A/s 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 2 3 4 6 5.5 A nA V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 3840 0.7 72 37 nC nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 35.5 40 32.5 35.3 30.7 42 Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOT424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 4.0V 40 ID (A) ID(A) 30 3.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 60 10V 50 40 125C 30 20 10 25C VDS=5V 5 Normalized On-Resistance VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=30A VGS=10V ID=30A RDS(ON) (m) 4 3 VGS=10V 2 10 ID=30A 8 1.0E+02 1.0E+01 1.0E+00 125C RDS(ON) (m) IS (A) 6 125C 1.0E-01 25C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 4 25C 2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOT424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=30A Capacitance (pF) 5000 4000 Ciss 3000 2000 Coss 1000 Crss 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000 RDS(ON) limited 10s 1ms 10ms 0.1s 1s 100s Power (W) 100 80 60 40 20 0 0.01 TJ(Max)=175C TA=25C 100 ID (Amps) 10 1 TJ(Max)=175C TA=25C 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse PD 0.1 Single Pulse 0.01 0.00001 Ton T 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOT424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 0.001 0.01 100 80 60 40 20 0 0.00001 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 120 tA = L ID BV - V DD Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 120 100 Current rating ID(A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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